Hiina Si epitaksia Tootjad, tarnijad, tehas

In CVD equipment, epitaxial deposition cannot be performed directly on metal or simply on a base, as this would be affected by various factors. Therefore, a susceptor is required. The substrate is placed on a tray, and epitaxial deposition is then performed on it using CVD technology. This susceptor is a silicon carbide-coated graphite susceptor (also called a wafer holder).

The graphite susceptor is a core component of MOCVD equipment, serving as both a carrier and a heat source for the substrate. Its performance parameters, such as thermal stability and thermal uniformity, determine the uniformity and purity of the thin film material. Therefore, its quality directly impacts epitaxial wafer production. Furthermore, it is highly susceptible to wear and tear with increased use and changes in operating conditions, making it a high-frequency consumable.

However, pure graphite susceptors can corrode and shed, significantly reducing their service life. Furthermore, fallen graphite powder can contaminate the chip. Coating technology, which provides surface powder fixation, enhanced thermal conductivity, and balanced heat distribution, has become a mainstream solution.

Silicon carbide (SiC) boasts numerous excellent properties, including high thermodynamic stability, excellent thermal conductivity, high electron mobility, oxidation and corrosion resistance, and a thermal expansion coefficient similar to that of graphite. It is the preferred material for graphite susceptor surface coatings.

The wafer susceptor is one of the most critical components in silicon epitaxial growth equipment. It supports silicon wafers and, under high-temperature induction or resistance heating, decomposes and deposits the reactant gases on the wafer surface, forming the epitaxial layer. Because of direct contact with high temperatures and reactant gases, Semicorex wafer susceptors utilize a high-purity graphite base and are SiC-coated to extend service life and maintain high purity.